High temperature (400~600℃）
provide energy for CVD reaction at the normal pressure.
TO：
Tin oxide (Tin Oxide), a transparent conductive oxide. In this as a former electrode, the high transparent is an important characteristic.
Common raw materials：
SiH4, liquid oxygen, the refrigerant, SnCl4, nitrogen.
PECVD deposit the A-si film
PECVD (Plasma-enhanced chemical vapor deposition) ：
In a vacuum , plasma provide the energy to CVD reaction, and helps reduce the reaction temperature (100-400 ℃)
A-Si：
Si (Amorphous Silicon), as a form of silicon, atoms with confusion, but a better light absorption rate is its character, it is main power generation layer in the solar cell.
Common raw materials：
Aluminum nails, aluminum target, Ar P gas, I gas, N gas, CH4, hydrogen, Ar
Sputter AL layer
Sputter：
Sputtering, create plasma and electric field in two relatively metal plate electrodes so that the plasma particles can be in collision with the target surface atoms and let it deposit on the substrate.
Metallizer：
Thermal Evaporation, in a vacuum, the atom of evaporation material is evaporated by heating resistance thereby reach the surface and deposited on the substrate.
